AO4453 12v p-channel mosfet general description p roduct summary v ds i d (at v gs =-4.5v) - 9a r ds(on) (at v gs =-4.5v) < 19m w r ds(on) (at v gs =-3.3v) < 22m w r ds(on) (at v gs =-2.5v) < 26m w r ds(on) (at v gs =-1.8v) < 36m w r ds(on) (at v gs =-1.5v) < 50m w 100% uis tested 100% r g tested symbol the AO4453 combines advanced trench mosfet technology with a low resistance package to provide extremely low r ds(on) . this device is ideal for load switch a nd battery protection applications. maximum units parameter absolute maximum ratings t a =25c unless otherwise noted -12v g d s soic-8 t op view bottom view d d d d s s s g symbol v ds v gs i dm i as e as t j , t stg symbol t 10s steady-state steady-state r q j l thermal characteristics w 2 .5 1.6 t a =70c j unction and storage temperature range -55 to 150 c units parameter typ max c/w r q j a 42 7 0 50 maximum junction-to-ambient a v 8 gate-source voltage drain-source voltage -12 v maximum units parameter a i d -9 - 7 -55 mj avalanche current c 20 a 2 0 t a =25c t a =70c p ower dissipation b p d avalanche energy l=0.1mh c pulsed drain current c continuous drain c urrent t a =25c m aximum junction-to-lead c/w c/w maximum junction-to-ambient a d 20 85 30 rev 0: oct. 2012 www.aosmd.com page 1 of 6 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO4453 symbol min typ max units bv dss -12 v v ds =-12v, v gs =0v -1 t j =55c -5 i gss 100 na v gs(th) gate threshold voltage -0.3 -0.6 -0.9 v i d(on) -55 a 15 19 t j =125c 19.5 25 17 22 m w 20 26 m w 27 36 m w 33 50 m w g fs -33 s v sd -0.6 -1 v i s -3.5 a c iss 1370 pf c oss 350 pf c rss 258 pf r g 10 20 w q g (4.5v) 12.7 18 nc q gs 1.7 nc q 3.4 nc maximum body-diode continuous current input capacitance output capacitance dynamic parameters reverse transfer capacitance v gs =0v, v ds =-6v, f=1mhz switching parameters gate resistance v gs =0v, v ds =0v, f=1mhz v gs =-4.5v, v ds =-6v, i d =-9a gate source charge gate drain charge total gate charge zero gate voltage drain current gate-body leakage current m w i s =-1a,v gs =0v v ds =-5v, i d =-9a v gs =-1.5v, i d =-1a forward transconductance diode forward voltage v gs =-2.5v, i d =-6a v gs =-1.8v, i d =-4a v gs =-3.3v, i d =-7a electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage on state drain current i d =-250 m a, v gs =0v v gs =-4.5v, v ds =-5v v gs =-4.5v, i d =-9a r ds(on) static drain-source on-resistance i dss m a v ds =v gs, i d =-250 m a v ds =0v, v gs =8v q gd 3.4 nc t d(on) 11 ns t r 25 ns t d(off) 70 ns t f 41.5 ns t rr 20.7 ns q rr 5.2 nc this product has been designed and qualified for the consumer market. applications or uses as critical c omponents in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. turn-on delaytime v gs =-4.5v, v ds =-6v, r l =0.67 w , r gen =3 w gate drain charge body diode reverse recovery charge i f =-9a, di/dt=100a/ m s turn-on rise time turn-off delaytime i f =-9a, di/dt=100a/ m s turn-off fall time body diode reverse recovery time a. the value of r q ja i s measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25 c. the value in any given application depends on the user's specific board design. b. the power dissipation p d is based on t j(max) =150 c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junction temperature t j(max) =150 c. ratings are based on low frequency and duty cycles to keep initialt j =25 c. d. the r q ja is the sum of the thermal impedance from junction to lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. rev 0: oct. 2012 www.aosmd.com page 2 of 6 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO4453 typical electrical and thermal characteristics 17 5 2 10 0 0 5 1 0 15 20 0 0.5 1 1.5 2 2.5 -i d (a) -v gs (volts) figure 2: transfer characteristics (note e) 0 2 0 40 60 0 3 6 9 12 15 r ds(on) (m w w w w ) -i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) v g s =-1.8v v g s =-1.5.v v g s =-2.5v 0.8 1 1 .2 1.4 1.6 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v g s =-1.5v i d =-1a v g s =-3.3v i d =-7a v g s =-2.5v i d =-6a v g s =-4.5v i d =-9a v g s =-1.8v i d =-4a 25 c 125 c v ds =-5v v g s =-3.3v v gs =-4.5v 0 5 1 0 15 20 25 30 35 0 1 2 3 4 5 -i d (a) -v ds (volts) fig 1: on-region characteristics (note e) -2v -4 .5v -2.5v - 3v v g s =-1.5v 40 1.0e-05 1 .0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -i s (a) -v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c 0 1 0 20 30 40 50 0 2 4 6 8 r ds(on) (m w w w w ) -v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d = -9a 25 c 125 c rev 0: oct. 2012 www.aosmd.com page 3 of 6 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO4453 typical electrical and thermal characteristics 0 1 2 3 4 5 0 3 6 9 12 15 -v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 4 00 800 1200 1600 2000 2400 0 2 4 6 8 10 12 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics c i ss c o ss c rss v d s =-6v i d =-9a 0.0 0 .1 1.0 10.0 100.0 0.01 0.1 1 10 100 -i d (amps) -v ds (volts) figure 10: maximum forward biased 10 m s 10s 1ms dc r d s(on) limited t j (max) =150 c t a =25 c 100 m s 10ms 1 1 0 100 1000 1 10 100 1000 -i ar (a) peak avalanche current time in avalanche, t a ( m mm m s) figure 9: single pulse avalanche capability (note t a = 25 c t a = 150 c t a = 100 c t a = 125 c 1 1 0 100 1000 10000 1e-05 0.001 0.1 10 1000 power (w) pulse width (s) figure 11: single pulse power rating junction-to-ambient (note f) t a = 25 c figure 10: maximum forward biased safe operating area (note f) figure 9: single pulse avalanche capability (note c) rev 0: oct. 2012 www.aosmd.com page 4 of 6 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO4453 typical electrical and thermal characteristics 0.001 0 .01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q ja normalized transient thermal resistance pulse width (s) figure 12: normalized maximum transient thermal impedance (note f) single pulse d=t o n /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d =0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja = 85 c/w rev 0: oct. 2012 www.aosmd.com page 5 of 6 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO4453 vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v vdd id vgs vds unclamped inductive switching (uis) test circuit & waveforms vds l - 2 e = 1/2 li ar a r bv dss vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 10% r on d (off) f off d (on) vdd vgs vgs rg dut vdc vgs id vgs - + i ar ig vgs - + vdc dut l vgs isd diode recovery test circuit & waveforms vds - vds + di/dt rm rr vdd vdd q = - idt t rr -isd -vds f -i -i rev 0: oct. 2012 www.aosmd.com page 6 of 6 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
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